NISE is a three-year platform research program (2011-2013) on Nanoscale Interfaces and Spin Electronics, which builds on the skills and equipment base established during the successful SFI-funded CINSE (2001-2006) and MANSE (2006-2010) programmes.

NISE involves materials development, investigation of new nanoscale phenomena, device conception and evaluation, and interdisciplinary initiatives associating nanoscale magnetism with electrochemistry and biochemistry.

NISE group photo 2011

The Magnetism and Spin Electronics Research Group - Summer 2011

Scientific and Technical Goals

  • Understand spin transport in thin films of small-molecule organics or conducting polymers and at their interfaces with inorganic metals and oxides.
  • Learn how to optimize spin transfer across interfaces by interposing thin (~ 1 nm) interface layers in the thin film structures.
  • Improve the quality of the interfaces in devices that depend on spin-transfer torque or which propagate spin currents.
  • Resolve the problem of d0 magnetism and decide whether it will be possible to make practical use of it.
  • Incorporate new materials into thin film magnetic device structures, including an organic spin FET.
  • Investigate electrochemical interfaces, and especially the influence of magnetic fields on them.
  • Develop magnetic field sensor arrays with improved signal/noise ratio and apply them to problems requiring high-bandwidth spatial imaging of distributions of magnetization or electric current, particularly in neuroscience (nanoneuronics).