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Brian Doyle, Components Research, Intel Corporation, Portland, Oregan

 

 

 

 

 


Brian Doyle obtained his bachelor’s degree from Trinity College Dublin (Ireland) in Physics before obtaining his M.Sc. and Ph.D. in Solid State Physics from the University of London, Chelsea College (Great Britain). His Ph.D. thesis was entitled “Dielectric Response in Doped Glass Ceramics”.

Following a post-doctorate position at the University of London, he worked for 6 years at Bull S.A in France on first on low temperature operation of nMOS circuits and then transistor reliability. He then moved to Massachusetts USA to work for Digital Equipment Corporation on reliability of MOS devices and gate oxide development.

Brian joined Intel (California) where he have been working since 1994, first as a manager of a small research team in new technologies modules for transistors, and then in Intel (Oregon), first researching scaled logic transistors for Intel’s different process generations, and now working on various embedded memory technologies.

Brian has published over 100 papers in internationally recognized scientific journals and has over 200 US and international patents.
He has also worked in various professional capacities:
·         He is an Editor of the IEEE Electron Device Letters Journal
·       He has received two Global Industry Association SEMI Awards: for Process and Technology Integration Breakthrough in High-K/Metal Gate in 2013, and for the Development of the Tri-Gate Transistor in 2016.
·         He has worked on the technical committee (reliability) of the International Technology Roadmap for Silicon (ITRS), a body setting direction for the semiconducting industry.
·         He has worked on different technical committees in various capacities: for the International Electron Device Meeting (IEDM), for the International Silicon-On-Insulator (SOI) conference and for the Device Research Conference (DRC).
·         He has also received two Intel Achievement Awards (Intel’s highest award) for work on transistor scaling and for developing Tri-Gate transistors, as well as numerous Intel Divisional Awards.