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PYU33P04 Condensed Matter II

                                                                                                                                         I
Hilary Term – 30 lectures/tutorials – 5 credits (D O’Regan, P Stamenov)

Part I: Physics of Semiconductors
Part II: Semiconductor Devices

Learning Outcomes
On successful completion of this module, students should be able to:

  • Describe magnetism in solids in terms of the angular momentum of the electrons, distinguishing between the spin and orbital contributions
  • Describe the basic behaviour of semiconductors in terms of doping and carrier concentrations
  • Calculate the dynamic behaviour of semiconductors in terms of drift, diffusion, generation, recombination and the consequences of inhomogeneous doping
  • Discuss the importance of semiconductors for consumer products and the information revolution
  • Further LOs to be confirmed

Syllabus

Part I: Physics of Semiconductors
Introduction to semiconductors. Charge carrier densities and Fermi level. Intinsic and extrinsic conductivity, doping with impurities. Carrier transport: drift, mobility, diffusion. Motion in magnetic fields: Hall effect and Cyclotron Resonance. Optical processes, optical absorption. Generation and recombination, minority carrier lifetime, photoconductivity. Non-equilibrium transport of charge carriers, the continuity equation. Inhomogeneous doping. The pn junction diode: depletion layer, built-in potential, electric field, current flow. Uses of diodes.

Part II: Semiconductor Devices
Syllabus to be confirmed

 

Assessment

Weighting

Examination

90%

Continuous Assessment in Physics of Semiconductors 

10%