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PYU33P04 Condensed Matter II  


Hilary Term – 30 lectures/tutorials – 5 credits (D O’Regan, P Stamenov)

Part I: Physics of Semiconductors
Part II: Semiconductor Devices

Learning Outcomes
On successful completion of this module, students should be able to:

•       Describe the basic behaviour of semiconductors in terms of doping and carrier concentrations
•       Calculate the dynamic behaviour of semiconductors in terms of drift, diffusion, generation, recombination and the consequences of inhomogeneous doping

  • Describe in detail the physics of bipolar and unipolar homojunction and heterojunction semiconductor devices.

•       Evaluate and predict through analytical calculations the performance of such devices, i. e. their input, output and/or their transfer characteristics 
•       Discuss the semiconductors for consumer products and the information revolution

Syllabus

Part I:  Physics of Semiconductors
Introduction to semiconductors. Charge carrier densities and Fermi level. Intrinsic and extrinsic conductivity, doping with impurities. Carrier transport: drift, mobility, diffusion. Motion in magnetic fields: Hall effect and Cyclotron Resonance. Optical processes, optical absorption. Generation and recombination, minority carrier lifetime, photoconductivity. Non-equilibrium transport of charge carriers, the continuity equation. Inhomogeneous doping.

Part II:  Semiconductor Devices

Construction techniques for devices. The planar process. The pn junction diode: depletion layer, built-in potential, electric field, current flow. Uses of diodes. Bipolar transistors. MOSFETs, LEDs and compound semiconductor devices, including Gunn devices, Esaki diodes and high-performance heterojunction transistors

 

Assessment

Weighting

Examination

100%