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ICT

This page highlights some of the technologies under development in CRANN in the field of ICT. These technologies are available for license or for development with a collaborative partner for a specific application.

Highly controlled CVD synthesis of 2D materials

A simple process to manufacture devices from MoS2 and WS2, using chemical vapour deposition (CVD).

Applications Include:

These materials offer an exciting alternative to graphene, as they possess a band gap, crucial for applications in electronics and photonics. They can also be used in chemical sensing applications as gas sensor devices produced in this manner display ultra-high sensitivities, down to 400 ppb for ammonia.

Photograph of MoS2 films formed by sulfurisation of Mo films of different thickness on fused quartz (top) and SiO2/Si (bottom) substrates. An increase in opacity with increasing starting film thickness is evident.

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Novel P-type Transparent Conducting Oxide

We have developed a novel material showing p-type semiconducting properties while maintaining good transmission in the visible range. Electrical and optical properties are on par or superior to other known p-type oxides such as delafossite CuAlO2.

Applications Include:

Transparent displays, solar cells, hole injectors for OLED devices and transparent lighting.

Sample of transparent screen.

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Mn2Ga Films for High Density Recording Mediums

A new ferromagnetic material Mn2Ga has been developed to address the requirement for high density bit patterned perpendicular recording medium in hard disk drives.

Mn2Ga has a great potential to fill the need for recording densities up to 10 Tbit per square inch with 10 year thermal stability, and can be deposited with deposition equipment that is already available in industrial facilities.

Applications Include:

Bit-patterned recording mediums, magnetic random access memories (MRAMs) and hard bias materials (actuators, transducers, etc.).

Current technology- continuous multi-grain media and future technology- bit-patterned media.

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Nano-mechanical switches (NEMS)

Nano electro-mechanical systems (NEMS) are of interest in high frequency, low power switching, alternative circuitry and sensors

Applications Include:

High frequency resonators,ultrasensitive sensors: chemical, biological, motion, acceleration, portable power generation (Energy harvesting), imaging, transistors/switches,resonators for radio and microwave frequencies

Illustration of side view of NEMS device

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New Magnetic Memory (FRAMM)

A new type of vertical memory where each layer encodes information in two degrees of freedom, which has the potential to increase the theoretical storage capacity by factor 4(n-1).

Applications Include:

High capacity data storage and applications where moderate amounts of storage with a need for very frequent updates are required.

Illustration of FRAMM.

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Controlled Location Deposition of Metals

This technology uses magnetically enhanced electrolysis to produce patterns on magnetic materials without the need for a mask.

Applications Include:

Patterned metal plating/coating of thin layers for use in the semiconductor and coatings sectors.

Electrodeposited patterns achieved using magnet arrays. The arrays are a) square parallel, b) square alternating, c) hexagonal parallel and d) hexagonal alternating arrangements. Bottom row: More electrodeposits under different conditions. The magnet arrays are d) hexagonal pair-wise alternating, e) square alternating, f) hexagonal parallel and g) hexagonal alternating.

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Diamond Nano Patterning

Diamond patterning technology developed in CRANN enables high resolution nano-scale engraving on to the surface of diamond.

This facilitates a wide range of applications specific to diamond in a simple cost-efficient method for the first time.

Applications Include:

Patterned metal plating/coating of thin layers for use in the semiconductor and coatings sectors.

Patterning on a wide variety of substrates.

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Block Co Polymer Patterning of Nanostructures

Providing a simple, cost effective approach to make equally spaced periodically ordered uniform size inorganic oxide nanostructures on different substrates for high technology applications.

The technology is based upon two related things, firstly using modified polymers as hard masks and secondly, the assembly of block copolymers on hard mask materials.

Applications Include:

Bottom-up self-assembly of nano-scale structures. The main application of this technology lies within the manufacture of sub-16 nm logic circuitry (for computer processors) and copper Interconnects for memory devices.

Bottom-up self-assembly of nano-scale structures. The main application of this technology lies within the manufacture of sub-16 nm logic circuitry (for computer processors) and copper Interconnects for memory devices.

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Controlled Nano-Wire Alignment and Growth

Unique manufacture method to create nanowires in known locations.

Applications Include:

Electronic interconnects, light harvesting and bio sensors.

Schematic of nano wire growth process.

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Self-assembled Metallic Photoresist

Enables the use of HSQ as an EBL resist on germanium wafers, thereby allowing the fabrication of miniaturised germanium high speed devices having high density nano-scale features.

Applications Include:

Electronic interconnects, light harvesting and bio sensors.

Schematic of nano wire growth process.

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Uniformly Shaped Metallic 3D-Sculptured Nano-Structures

This novel manufacturing method allows for production of uniformly shaped custom three-dimensionally sculptured nano-structures (helices, zig-zags, etc.) made from metals and high surface mobility materials.

Applications Include:

Sensing, communications, optical devices, energy harvesting and enhanced light adsorption for solar technologies.

Image of nano helical structure manufactured in CRANN.

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Novel Carbon-Silicon Schottky Diodes

We have developed a carbon-silicon Schottky diode that has outstanding electrical performance and high temperature stability which helps to increase the peak current compatibility.

Applications Include:

Devices in the ICT sector or any high temperature electronics applications including; power semiconductor devices, switching devices, high temperature electronics and high frequency devices.

Schematic and semi-log I-V curve of the carbon/n-Si Schottky barrier diode.

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Optical Signal to Noise Ratio Measurement Device

This OSNR measurement device provides a cost-effective and robust solution to the in-band OSNR monitoring problem.

Impairments to the signal incurred from the network such as chromatic dispersion, polarization mode dispersion, additional filtering, etc, will not influence the function of the module.

Applications Include:

Optical telecommunications. ONSR is a key parameter for future high speed and transparent optical networks.

OSNR is a key measure of the health of optical networks; particularly those used for optical telecommunications, and is a key parameter for future high speed and transparent optical networks.

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