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NISE is a three-year platform research program (2011-2013) on Nanoscale Interfaces and Spin Electronics, which builds on the skills and equipment base established during the successful SFI-funded CINSE (2001-2006) and MANSE (2006-2010) programmes.

NISE involves materials development, investigation of new nanoscale phenomena, device conception and evaluation, and interdisciplinary initiatives associating nanoscale magnetism with electrochemistry and biochemistry.

The Magnetism and Spin Electronics Research Group - Summer 2011

Scientific and Technical Goals

  • Understand spin transport in thin films of small-molecule organics or conducting polymers and at their interfaces with inorganic metals and oxides.
  • Learn how to optimize spin transfer across interfaces by interposing thin (~ 1 nm) interface layers in the thin film structures.
  • Iimprove the quality of the interfaces in devices that depend on spin-transfer torque or which propagate spin currents.
  • Resolve the problem of d0 magnetism and decide whether it will be possible to make practical use of it.
  • Incorporate new materials into thin film magnetic device structures, including an organic spin FET.
  • Investigate electrochemical interfaces, and especially the influence of magnetic fields on them.
  • Develop magnetic field sensor arrays with improved signal/noise ratio and apply them to problems requiring high-bandwidth spatial imaging of distributions of magnetization or electric current, particularly in neuroscience (nanoneuronics).