MBE

The Molecular Beam Epitaxy (MBE) is a commercial M600 Series MBE supplied by DCA Instruments, Finland. The system consists of a main growth chamber along with a load lock chamber module. Samples are loaded into the growth chamber from the load lock chamber, through a UHV Gate Valve, using a magnetic coupled transfer arm.

The deposition chamber is a vertical 600 mm ID chamber (base pressure (<5E-10 Torr), designed for metal or oxide- MBE. It is equipped with a large volume cryopanel, one single and one multi-heart electron gun, three effusion cells, substrate manipulator, deposition rate monitors and oxygen plasma source. It is also equipped with the state of art Reflection High Energy Electron Diffraction (RHEED) and Residual Gas Analyser (RGA) facilities for in-situ characterization of growth parameters.

Applications include:

• Growth of epitaxial thin films
• Growth of epitaxial heterojunctions