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Research Positions
in Surface and Interface Physics and X-ray Spectroscopy |
1. Postgraduate Project: In situ characterisation and control of defects at the interface between new high-k dielectric materials and silicon
Progress in ICT requires making electronic devices with smaller active regions, because these are faster and more efficient. Nanoscale features of 45nm on silicon are being developed, requiring SiO 2 gate oxides <1nm thick, which then leak by quantum mechanical tunneling. High-k dielectrics offer the possibility of using thicker layers to deliver the required performance with the same chip architecture. Growing new, high-k gate oxide is very difficult and will be optimized by a new application of electric-field-induced second-harmonic generation to make in situ, contactless measurements of the band offset and defect density at the oxide interface during growth.
Supervisor: Prof John McGilp
Funder: SFI Research Frontiers Programme (final decision in March)
Availability: 1 st June 2007
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