|
Secondary Navigation
|
Research Facilities, John McGilp |
|
The group has two ultra-high vacuum (UHV) systems, with Knudsen cells and electron beam evaporators for contamination-free, monolayer epitaxial growth. Low energy electron diffraction (LEED), reflection high energy electron diffraction (RHEED), and Auger electron spectroscopy (AES) are used as standard surface characterisation techniques. The group also has access to scanning tunneling microscopy (STM) and white light interferometry.The group has access to other epioptic techniques such as reflection anisotropy spectroscopy and surface Raman spectroscopy.
| |
| |
|
schematic of the RAS system showing the primary components.
|
|
RAS measures the difference in reflectance of normal incidence plane-polarized light between two orthogonal directions in the surface plane. more details... |
| |
The main epioptic technique is optical three wave mixing, particularly second harmonic generation (SHG). The group has the only UHV SHG facility in Ireland, and has used this successfully, over a number of years, for in situ studies of surfaces and interfaces under UHV conditions.
|
The group's state-of-the-art, tunable,
femtosecond
Ti:sapphire laser system. |
| |
|
|
Spectroscopic Ellipsometry
This technique is generally used to characterise thin films, mainly the optical constants and film thckness. It has the capability to analyze complex structures such as multilayers, interface roughness, inhomogeneous layers, anisotropic layers and much more. Ellipsometery is provided as a service internaly and on occasion externally. please click here to continue for further information... |
|
|
