Trinity College Dublin

Position: Postdoc

Education:
Ph.D. (Sep. 2002 ~ Feb. 2006): Korea University , Department of Materials Science and Engineering
M.S. (Sep. 2000 ~ Aug. 2002): Korea University , Department of Metallurgical Engineering
B.S. (Mar. 1993 ~ Aug. 1999): Korea University , Department of Metallurgical Engineering

Specialities:
Thinfilm multilayers, Magnetic tunnel junctions

Current Projects:
BioSensor (spin valve sensor for reading magnetic barcodes)

Activities/Interests: Drinking

Brief Bio:
Research Scholar at Department of Electrical Engineering, University of California at Los Angeles (Nov. 2006 ~ July. 2007)
Joint Research Assistant, Materials and Devices Laboratory, Samsung Advanced Institute of Technology , Suwon , Korea (Sep. 2003 ~ Aug. 2005)
Staff Engineer, LG Siltron Co. (Oct. 1999 ~ Jul. 2000)

Publications:
1. 'Characteristics of Magnetic Tunnel Junctions Consisting of Amorphous CoNbZr Layers', J. Appl. Phys. 93 (10), 8361, May 15 (2003).

2. 'Surface Roughness Effects on Bias Voltage Characteristics in CoNbZr-Based Magnetic Tunnel Junction', J. Magn. Magn. Mater. 272-276, E1481, May 1 (2004).

3. 'Tunnel barrier's property in magnetic tunnel junctions probed by Raman spectroscopy', Phys. Stat. Sol. (a) 201 (8), 1684, June 1 (2004).

4. 'Influence of Freelayer in Magnetic Tunnel Junction on Switching of Submicrometer MRAM Arrays', IEEE Trans. Magn. 41 (2) 883, February 1 (2005).

5. 'Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion', J. Appl. Phys. 97 (1). 10C917-1, May 15 (2005).

6. 'Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing', Solid State Communications. 135, 348, June 9 (2005).

7. 'Magnetization switching and tunneling magnetoresistance effects of synthetic antiferromagnet free layers consisting of amorphous NiFeSiB', Appl. Phys. Lett. 87, 082508, (2005).

8. 'Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer', IEEE Trans. Magn. 45, 2688, (2005).

9. 'Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB', IEEE Trans. Magn. 45, 2685, (2005).

10. 'Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers', J. Appl. Phys. 99, 08A902 (2006).

11. 'Magnetoresistance and magnetization switching characteristics of magnetic tunnel junctions with amorphous CoFeSiB single and synthetic antiferromagnet free layers', J. Appl. Phys. 99, 08T315 (2006).

12. 'Magnetization switching of CoFeSiB free layered magnetic tunnel junctions', J. Magn. Magn. Mater. 303 (2), e223 ~ e225 (2006).

13. 'Tunneling magnetoresistance and magnetization switching of CoFeSiB free layered magnetic tunnel junctions', J. Magn. Magn. Mater. 303 (2), e231 ~ e233 (2006).

14. 'Magnetization switching of NiFeSiB free layered magnetic tunnel junctions', J. Magn. Magn. Mater. 304, e258~260 (2006).

15. 'Switching characteristics of magnetic tunnel junction with amoprphous CoFeSiB free layer', J. Magn. Magn. Mater. 304, e276~e278 (2006).

16. 'Simulation studies of domain wall width changes in various nanocontact shapes', IEEE Trans. Magn. IEEE Trans. Magn. 42 (10), 2621 ~ 2623, October 1 (2006).

17. 'Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer', IEEE Trans. Magn. 42 (10), 2649 ~ 2651, October 1 (2006).

18. 'Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers', J. Magn. Magn. Mater. 310, 1929 ~ 1931 (2007).

19. 'Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous ferromagnetic NiFeSiB layers', J. Magn. Magn. Mater. 310, e638 ~ e640 (2007).

20. 'Domain wall width and velocity behaviors in notched magnetic devices', J. Appl. Phys. 101, 09F504 (2007).

21. 'Structural and Magnetic Properties of Amorphous and Nanocrystalline CoFeSiB Thin Films', IEEE Trans. Nano. 7 (4), 409-411 (2008).

22. 'Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers', Phys. Stat. Sol. (a) 205 (8), 1847-1850 (2008).

23. 'Magneto-Transport Characteristics of Magnetic Tunnel Junction with a Synthetic Antiferromagnetic Amorphous CoFeSiB Free Layer ', IEEE Trans. Magn. 44 (11), 2598 ~ 2600 (2008).